光电二极管(PIN)
新势力光电供应光电二极管(PIN),用于将光信号转换为电信号,形成光电效应/光电池。PIN 光电二极管应用广泛,包括: 安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。
UV/blue sensitive photodiodes
Type No. Active area Dark current Rise time
Chip Package Size Area 5V 410nm 5V 50Ω
mm mm2 nA ns
PS1-2 TO52 1.0x1.0 1 0.01 50
PS1-2 LCC6.1 1.0x1.0 1 0.01 50
PC5-2 TO5 Ø 2.52 5 0.3 150
PS7-2 TO5 2.66x2.66 7 0.4 200
PC10-2 TO5 Ø 3.57 10 1 300
PS13-2 TO5 3.5x3.5 13 1 300
PS33-2 TO8 5.7x5.7 33 2 600
PC50-2 BNC Ø 7.98 50 5 1000
PS100-2 BNC 10x10 100 10 2000
PS100-2 CERpin 10x10 100 10 2000
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm
Blue/green sensitive photodiodes
Type No. Active area Dark current Rise time
Chip Package Size Area 5V 410nm 5V 50Ω
mm mm2 nA ns
PC1-6b TO52S3 Ø 1.13 1 0.05 10
PC5-6b TO5 Ø 2.52 5 0.1 20
PS7-6b TO5 2.7x2.7 7 0.15 25
PC10-6b TO5 Ø 3.57 10 0.2 45
PS13-6b TO5 3.5x3.5 13 0.25 50
PS33-6b TO8 5.7x5.7 33 0.6 140
PS100-6b CERpin 10x10 100 1 200
PS100-6b LCC10S 10x10 100 1 200
Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm
High speed photodiodes (for fast rise times at low reverse voltages)
Type No. Active area Dark current Rise time
Chip Package Size Area 20V 850nm 20V 50Ω
mm mm2 nA ns
PS0.25-5 LCC6.1 0.5x0.5 0.25 0.1 0.4
PS0.25-5 TO52S3 0.5x0.5 0.25 0.1 0.4
PC0.55-5 TO52S1 Ø 0.84 0.55 0.2 1
PC0.55-5 LCC6.1 Ø 0.84 0.55 0.2 1
PS1-5 LCC6.1 1.0x1.0 1 0.2 1.5
PS1-5 TO52S3 1.0x1.0 1 0.2 1.5
PS7-5 TO5 2.7x2.7 7 0.5 2
PS11.9-5 TO5 3.45x3.45 11.9 1 3
PC20-5 TO8 Ø 5.05 20 2 3.5
PS33-5 TO8 5.7x5.7 33 2 3.5
PS100-5 CERpinS 10x10 100 2 5
PS100-5 LCC10S 10x10 100 2 5
High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
Type No. Active area Dark current Rise time
Chip Package Size Area 20V 850nm 20V 50Ω
mm mm2 nA ns
PS0.25-5t LCC6.1 0.5x0.5 0.25 1 0.4
PC0.55-5t LCC6.1 Ø 0.84 0.55 5 1
PC0.55-5t T1 3/4 Ø 0.84 0.55 5 1
PC0.55-5t T1 3/4 black Ø 0.84 0.55 5 1
PS1-5t LCC6.1 1.0x1.0 1 1 1
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ? and X-radiation detection)
Type No. Active area Dark current Rise time
Chip Package Size Area 10V 850nm 10V 50Ω
mm mm2 nA ns
PC1-6 TO52S1 Ø 1.13 1 0.05 10
PC1-6 TO52S3 Ø 1.13 1 0.05 10
PC5-6 TO5 Ø 2.52 5 0.1 13
PS7-6 TO5 2.66×2.66 7 0.1 15
PC10-6 TO5 Ø 3.57 10 0.2 20
PS13-6 TO5 3.5×3.5 13 0.2 20
PC20-6 TO8 Ø 5.05 20 0.3 25
PC50-6 TO8S Ø 7.98 50 0.5 30
PS100-6 BNC 10×10 100 0.8 50
PS100-6 CERpinS 10×10 100 0.8 50
PS100-6 LCC10S 10×10 100 0.8 50
IR photodiodes with fully depletable (very low capacitance levels)
Type No. Active area Dark current Rise time
Chip Package Size Area 10V 905nm 10V 50Ω
mm mm2 nA ns
PC5-7 TO8i Ø 2.52 5 0.05 45
PC10-7 TO8i Ø 3.57 10 0.1 50
PC20-7 TO8Si Ø 5.05 20 0.2 50
PS100-7 LCC10 10×10 100 1.5 50
QP100-7 LCC10 10×10 4×25 0.5 50
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Type No. Active area Dark current Rise time
Chip Package Size Area 150V 1064nm 150V 50Ω
mm mm2 nA ns
QP22-Q TO8S Ø 5.3 4×5.7 1.5 5
QP45-Q TO8S 6.7×6.7 4×10.96 3 5
QP154-Q TO1032i Ø 14.0 4×38.5 10 6
PIN Series Optimized for Special features Application
Series-2 200-500 nm UV / Blue enhanced Analytical instruments, readout for scintillators
Series-6b 400-650 nm Blue / Green enhanced Photometric illuminometer
Series-5b 360-550 nm High-speed Epitaxy, blue / green enhanced Optical fiber communication, high speed photometry
Series-5t 400-850 nm High-speed Epitaxy, low voltage (3.5V)
Series-5
01
20
2016
光电二级管 PIN二极管 光电管
来源:[杭州新势力光电技术有限公司]
联系人:新先生
手机:18857185432
电话:571-85152711
传真:571-85152722
QQ:4000071064
Email:sales@newopto.com
地址:浙江省杭州市杭州市中国杭州市西湖区申花路789号剑桥公社D座7F
品牌:杭州新势力光电
价格:面议
元/
供应地:浙江省杭州市
产品型号:光电二极管